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Defence Research and Development Organisation (DRDO) has made significant strides in semi-conductor technology by developing indigenous methods for producing four-inch Silicon Carbide (SiC) wafers and fabricating Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) up to 150 W, informed chairman and secretary, Department of Defence Research and Development (DDR&D) Samir V. Kamat. Addressing a gathering on Friday, organised as a curtain raiser for the upcoming Emerging Science, Techn ...Read More >
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